| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which avoids the risk that the device layer is etched during etching of the sacrificial layer. Ž<P>SOLUTION: The method of manufacturing a semiconductor device includes: forming a sacrificial layer 42 which is pseudomorphic to InP after joining or bonding a support substrate 10 to a flat surface 35A of a protection film 35, and then selectively removing it using hydrofluoric acid to separate the InP substrate 41 from the support substrate 10 including an InP-based device layer 21. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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