| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of an embedded electrode with which the embedded electrode such as a through electrode can be formed without contaminating an element and wiring, and to provide a manufacturing method of a semiconductor device. SOLUTION: When the embedded electrode is formed in such a way that it is embedded in a semiconductor substrate 11, a resist mask 14 having an opening part 14a in a previously decided position where the buried electrode is to be formed is formed on a face where an interlayer insulating film 12 and signal wiring 13 of the semiconductor substrate 11 are formed. The interlayer insulating film 12 and the semiconductor substrate 11 are etched and deep holes 15 are formed. Intra-hole insulating films 16 and conductive plugs 17 are formed in the deep holes 15 in a state where the resist mask 14 is left, and the resist mask 14 is removed. Thus, the embedded electrode constituted of the conductive plug 17 can be formed without contaminating the semiconductor element and signal wiring 13, which are used when the intra-hole insulating films 16 and the conductive plugs 17 are formed in the deep holes 15. COPYRIGHT: (C)2005,JPO&NCIPI |
