| 摘要 |
PURPOSE: A semiconductor light emitting device and a fabrication method thereof are provided to improve the optical extraction efficiency. CONSTITUTION: A semiconductor light emitting device is comprised of the first conductivity semiconductor layer(130), an active layer(140), the second conductivity semiconductor layer(150), and a groove pattern(160). The active layer is formed on the first conductivity semiconductor layer. The second conductivity semiconductor layer is formed on the active layer. The groove pattern is formed on at least one surface of the first conductivity semiconductor layer and the second conductivity semiconductor layer.
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