| 摘要 |
PURPOSE: A technique for controlling trench profile in semiconductor structure is provided to accurately control about the trenches with low, middle, or high longitudinal and cross ratio. CONSTITUTION: A formation method of the semiconductor structure is as follows. The trenches having a side wall with a first width and a first slope along the first depth bottom in a semiconductor region(100) using mask layer. The mask layer is removed. A slope etching process is performed to the trench side walls are tapered to have a second slope which is smaller than the first slope.
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