METHOD FOR SIMULATION BY SIMULATOR FOR OBTAINING ELECTRIC CHARACTERISTICS OF THIN-FILM TRANSISTOR DISPOSED IN CRYSTALLIZED REGION AND PHYSICAL ANALYSIS MODEL FOR CALCULATING AND EXTRACTING COULOMB SCATTERING CENTRAL DENSITY INCLUDED IN CHANNEL REGION OF THIN-FILM TRANSISTOR DISPOSED IN CRYSTALLIZED REGION

摘要

PROBLEM TO BE SOLVED: To provide a model for performing physical analysis on a grain boundary determining a mobility by applying a universal plot for Poly-Si TFT. SOLUTION: The physical analysis model provides for analyzing the mobility μ of Poly-Si TFT. The mobility μ and the Vg-Id characteristic of the TFT are measured and 3 mobilities, Coulomb scattering mobility μ (Coulomb), phonon scattering mobility μ (phonon) and surface roughness scattering μ (surface), and an effective electric field Eeff are calculated from the measured mobility μ and the Vg-Id characteristic of the TFT. The physical analysis model includes a step of obtaining a free carrier density n from the effective electric field Eeff, and a step of obtaining the Coulomb scattering center density N (Coulomb) using the correlation characteristic between the Coulomb scattering mobility μ (Coulomb) and the free carrier density n. COPYRIGHT: (C)2010,JPO&INPIT