| 摘要 |
A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed (108) over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal layer is then etched (110) using the first print-patterned mask to form source and drain electrodes. A semiconductive layer and an insulative layer are formed (114) thereover. A layer of photosensitive material (118) is then deposited and exposed (120) through the substrate, with the source and drain electrodes acting as masks for the exposure. Following development (122) of the photosensitive material, a gate metal layer is deposited (124). A second print-patterned mask is then formed (126) over the device, again by digital lithography, Etching (128) and removal (132) of the photosensitive material leaves the self-aligned top-gate electrode. |
