发明名称 GROUP-? METAL NITRIDE AND PREPARATION THEREOF
摘要 A method for forming a group-III metal nitride material film attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500°C-800°C. The method further includes the procedures of introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and 2.5 Pa, until group III metal nitride molecules form on the group III metal drops. The method also includes the procedures of maintaining the working pressure and the active nitrogen until the group III metal nitride molecules diffuse into the group III metal drops, forming nitride/metal solution drops, and until the nitride/metal solution drops turn into a wetting layer on the substrate, and continuing to increase the concentration of group III metal nitride molecules in the wetting layer until all the group III metal atoms contained in the wetting layer are exhausted, and the wetting layer transforms into a group III metal nitride film. According to another aspect of the disclosed technique, if the wetting layer is relatively thin, then group-III metal nitride molecules diffuse into the wetting layer, during the procedure of continuing to increase, thereby increasing the viscosity thereof, transforming the wetting layer into a solid amorphous group III metal nitride film. According to a further aspect of the disclosed technique, if the wetting layer is relatively thick, then a crystalline seeding layer is formed on the surface of the wetting layer, during the procedure of continuing to increase, and wherein the active nitrogen diffuses through the seeding layer, reacting with group-III metal in the wetting layer, thereby further thickening the seeding layer, transforming the wetting layer into a crystalline group III metal nitride film.
申请公布号 KR20090112766(A) 申请公布日期 2009.10.28
申请号 KR20097019713 申请日期 2008.02.21
申请人 发明人
分类号 C23C14/06;C23C14/14;C23C14/58;C30B23/02 主分类号 C23C14/06
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