<p>PURPOSE: A formation method of a non-volatile memory device is provided to secure the uniform distance between the active areas and the control gate by decreasing the interference between the adjacent floating gates of the volatile memory device. CONSTITUTION: A formation method of a non-volatile memory device is as follows. An active areas defined by an element isolation layer(120) on a substrate(100) are formed. The first gate patterns(110) are formed on the active areas. The first insulating layers are formed by oxidizing the edges of first gate patterns. The second insulating layers are formed on the element isolation layer and the first gate patterns in conformal. The gap-fill dielectric layer is formed on the second insulating layers. The recess region is formed in the element isolation layer by etching the gap-fill dielectric layer, the second insulating layer and the first insulating layers.</p>
