| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the punch through phenomenon by injecting the ion into the lower part of body. CONSTITUTION: A manufacturing method of semiconductor device is as follows. A gate pattern is formed on an insulating layer(202) and a silicon layer formed on the upper part of semiconductor substrate. A silicon layer exposed between the gate patterns is removed. A plug is formed by filling up the gap between the gate patterns. The exposed silicon layer is removed. The part of the silicon layer is etched. A spacer is formed on the side wall of the gate pattern and the silicon layer. The silicon layer exposed between the spacers is etched to expose the insulating layer.</p> |
