发明名称 |
PREPARATION METHOD OF QUANTUM DOT-INORGANIC MATRIX COMPOSITES |
摘要 |
PURPOSE: A preparation method of quantum dot-inorganic matrix composites is provided to exhibit high luminous efficiency. CONSTITUTION: A preparation method of quantum dot-inorganic matrix composites comprises the following steps of: preparing an inorganic matrix precursor solution containing more than one kind of quantum dot precursor(S10); rotation-coating the inorganic matrix precursor solution on a substrate to form an inorganic matrix thin film(S20); heat-treating the inorganic matrix thin film to form an inorganic matrix at the same time growing the quantum dot precursor inside the inorganic matrix in order to obtain the quantum dot-inorganic matrix composites(S30).
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申请公布号 |
KR20090112159(A) |
申请公布日期 |
2009.10.28 |
申请号 |
KR20080037883 |
申请日期 |
2008.04.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;POSTECH ACADEMY-INDUSTRY FOUNDATION |
发明人 |
KIM, SUNG JI;LEE, JIN SIK;OH, SONG JOO |
分类号 |
B82B3/00;B82B1/00;B82Y20/00;B82Y30/00;B82Y40/00;C01B19/04;C03C17/02;C09K11/00;H01L33/06;H01L33/28;H01L33/30;H01L33/32;H01L33/44;H01S5/343 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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