| 摘要 |
FIELD: physics. ^ SUBSTANCE: semiconductor photoelectric generator has a double-sided working surface, a substrate, p- and n-type semiconductor planar layers, antireflection coating and metal contacts on two sides of the generator. Configuration and area of the contacts on the rear side coincide with the configuration and area of contacts on the front side. Thickness of the base area does not exceed diffusion distance of minority charge carriers. The generator is made from m diode planar n+-p-p+(p+-n-n+; n-p-p+; p-n-n+) connected in series on the entire plane; or n-p structures from semiconductor material (m=3,5,7Ç(2i-1), where i=1,2,3), one or two linear dimensions of each diode arrangement does not exceed diffusion length of minority current carriers in the base area, and thickness of diode arrangements, equidistant from the front and rear surfaces of the generator, coincide and increase moving away from the front and rear surfaces inversely proportional to the maximum coefficient of absorption of radiation in the semiconductor material of the base of the diode arrangement. According to the invention, one more version of the semiconductor photoelectric generator and two versions of the method of making the semiconductor photoelectric generator are also proposed. ^ EFFECT: higher operating voltage and increased efficiency of converting electromagnetic radiation and possibility of working with concentrated radiation. ^ 18 cl, 3 ex, 1 tbl, 5 dwg |
