| 摘要 |
PURPOSE: A bypass unit of an IO control circuit is provided to reduce a leakage current consumed in a whole nonvolatile memory device. CONSTITUTION: A bypass unit(330) of an IO control circuit includes a pull-up unit(410), a pull-down unit(420), and a ground voltage supply unit(430). The pull-up unit supplies a power voltage to an output terminal according to a bypass signal and an input data. The pull-up unit includes a first PMOS(P410) and a second PMOS serially connected between a power voltage terminal and the output terminal. The pull-down unit delivers a ground voltage to the output terminal according to the bypass signal and the input data. The ground voltage supply unit supplies a ground voltage to the pull-down unit according to a data input enable signal. |
