| 摘要 |
FIELD: physics. ^ SUBSTANCE: method of making semiconductor photoelectric generator involves formation of a multilayer structure through epitaxial growth of layers on a semiconductor substrate, metal coating, deposition of antireflection coating, and connecting current collectors. Between p+-n(n+), thin heavily doped p+ type layers are grown, with thickness less than 1 mcm and concentration of active impurities over 1018 cm-3. Shunt tunnel p -n(n+) junctions are formed and progressive switching is provided for. The top epitaxial layer is metal coated and a contact in form of a continuous metal layer is made. The work pieces are cut into matrices, and antireflecting coating is deposited on end faces illuminated by working light. In another version of the method, thickness of p+-n(n+) type layers is less than 12 mcm, antireflecting coating is deposited on the top epitaxial layer and by metal coating the said epitaxial layer, a contact in form of a grid is made. Working light illuminates the said top epitaxial layer. ^ EFFECT: high reproducibility of good output characteristics during mass production. ^ 2 cl, 2 ex, 2 tbl, 1 dwg |
