| 摘要 |
An object of the present invention is to provide a piezoelectric thin film device including a single or a plurality of film bulk acoustic resonators wherein a frequency impedance characteristic is unsusceptible to spuriousness. In a film bulk acoustic resonator, a piezoelectric thin film is supported by a support substrate via an adhesive layer. An upper electrode and a lower electrode each having a predetermined pattern are formed on upper and lower surfaces of the piezoelectric thin film. Further, on the upper surface of the piezoelectric thin film, an additional film for adding a mass to an outside of an excitation region is formed as superposed on the upper electrode.
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