发明名称 |
Light emitting element and method of making same |
摘要 |
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0<=x<=1, 0<=y<=1 and 0<=x+y<=1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
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申请公布号 |
US7608472(B2) |
申请公布日期 |
2009.10.27 |
申请号 |
US20070982580 |
申请日期 |
2007.11.02 |
申请人 |
KOHA CO., LTD. |
发明人 |
ICHINOSE NOBORU;SHIMAMURA KIYOSHI;KANEKO YUKIO;GARCIA VILLORA ENCARNACION ANTONIA;AOKI KAZUO |
分类号 |
H01L21/00;C30B15/00;C30B15/34;H01L21/205;H01L33/00;H01L33/28;H01L33/32;H01L33/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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