发明名称 |
Split-gate non-volatile memory |
摘要 |
A split-gate non-volatile memory cell is described, including a substrate, a charge-trapping layer on the substrate, a split gate on the charge-trapping layer, and a source/drain in the substrate beside the split gate. The split gate includes at least one split region directly over the charge-trapping layer, and the charge-trapping layer around the split region serves as a coding region. A NAND non-volatile memory array is also described including the above-mentioned split-gate non-volatile memory cells that are arranged in a NAND-type configuration.
|
申请公布号 |
US7608882(B2) |
申请公布日期 |
2009.10.27 |
申请号 |
US20030604692 |
申请日期 |
2003.08.11 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN;LIU RUI-CHEN |
分类号 |
H01L29/788;G11C16/04;H01L21/28;H01L21/336;H01L21/8246;H01L27/108;H01L27/115;H01L29/423;H01L29/792 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|