发明名称 |
Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same |
摘要 |
Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that includes a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.
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申请公布号 |
US7608853(B2) |
申请公布日期 |
2009.10.27 |
申请号 |
US20080278331 |
申请日期 |
2008.06.27 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
HUH CHUL;PARK RAE-MAN;SHIN JAE-HEON;KIM KYUNG-HYUN;KIM TAE-YOUB;CHO KWAN-SIK;SUNG GUN-YONG |
分类号 |
H01L29/06;H01L21/00;H01L21/26;H01L21/324;H01L21/42;H01L21/477;H01L29/22;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L33/18;H01L33/34 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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