| 摘要 |
Disclosed is a method for forming a capacitor of a semiconductor device, which can secure wanted charging capacity and also improve leakage current characteristics. The method comprises the steps of: forming a storage electrode on a semiconductor substrate; forming a dielectric layer formed of Ti(1-x)TbxO on the storage electrode; and forming a plate electrode on the dielectric layer formed of Ti(1-x)TbxO.
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