发明名称 |
Thin-film device and method of manufacturing same |
摘要 |
A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor incorporates: a lower conductor layer disposed on the flattening film; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The thickness of the dielectric film falls within a range of 0.02 to 1 mum inclusive and is smaller than the thickness of the lower conductor layer. The surface roughness in maximum height of the top surface of the flattening film is smaller than that of the top surface of the substrate and equal to or smaller than the thickness of the dielectric film. The surface roughness in maximum height of the top surface of the lower conductor layer is equal to or smaller than the thickness of the dielectric film.
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申请公布号 |
US7608881(B2) |
申请公布日期 |
2009.10.27 |
申请号 |
US20060588321 |
申请日期 |
2006.10.27 |
申请人 |
TDK CORPORATION |
发明人 |
KUWAJIMA HAJIME;MIYAZAKI MASAHIRO;FURUYA AKIRA |
分类号 |
H01L27/108;H01G4/33;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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