METHOD OF MAKING NITRIDE SEMICONDUCTOR AND P-TYPE NITRIDE SEMICONDUCTOR DEVICE

摘要

FIELD: physics. ^ SUBSTANCE: method of making a p-type nitride semiconductor involves: growing a p-type nitride semiconductor with a multilayer structure, with several high-concentration thin films and several low-concentration thin films, lying alternately; and annealing the p-type nitride semiconductor to improve its electrical properties. The p-type nitride semiconductor with a multilayer structure is grown through modulation doping, where flow of p-type dopant source for high-concentration thin films is at least twice greater than flow of p-type dopant source for low-concentration thin films. A nitride semiconductor light-emitting device with an active layer of the said p-type nitride semiconductor is also proposed. ^ EFFECT: obtaining a multilayer p-type nitride semiconductor with high conductivity and high crystallinity. ^ 10 cl, 11 dwg