发明名称 METHOD FOR FABRICATING PHASE SHIFT MASK
摘要 PURPOSE: A method for producing a phase shift mask is provided to protect transparent substrate part which is exposed between phase shift film pattern using a negative resist film. CONSTITUTION: A method for producing a phase shift mask comprises: a step of preparing the phase shift mask in which first phase shift film pattern (110) is placed on a substrate (100); a step of forming resist film on the transparent substrate in which first phase shift film pattern is placed; a step of performing light exposure with UV on rear side of transparent substrate which faces to the resist film; a step of forming resist film pattern (131) to the light exposed resist film; a step of etching the first phase shift film pattern in a specific thickness; and a step of converting to the second phase shift film pattern (110a).
申请公布号 KR20090111684(A) 申请公布日期 2009.10.27
申请号 KR20080037405 申请日期 2008.04.22
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHUN, JUN
分类号 G03F1/26;G03F7/20;H01L21/027 主分类号 G03F1/26
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