| 摘要 |
PURPOSE: A gate structure and a manufacturing method thereof are provided to improve an electrical property of a semiconductor device by forming a tungsten film of a large grain. CONSTITUTION: A gate structure includes a polysilicon film, a tantalum film, an amorphous TiN film, and a tungsten film. The polysilicon film is arranged on a semiconductor substrate(100). The tantalum film is arranged on the polysilicon film. The amorphous TiN film is arranged on the tantalum film. The tungsten film is arranged on the amorphous TiN film. The poly silicon film includes one of an n-type dopant and a p-type dopant. Thickness of the tantalum film is 30Å~40Å. Thickness of the amorphous TiN film is 20Å~30Å. Thickness of the tungsten film is 380Å~420Å.
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