METHOD FOR MANUFACTURING CAPACITOR WITH PILLAR STORAGE NODE

摘要

PURPOSE: A method for manufacturing a capacitor including a pillar type storage node is provided to prevent a crack of a storage node by inserting a buffer film to an inner part of a conductive film used as a storage node in forming a pillar type storage node. CONSTITUTION: An insulation film(22) having an open region is formed on a substrate(21). A first conductive film(27A) and a buffer film(28A) are successively formed on the insulation film. A second conductive film(29A) is formed on the buffer film, and is filled in the open region. The first conductive film, the buffer film, and the second conductive film remains inside the open region through a storage node separation process. A pillar type storage node is completed by forming a third conductive film(31) which connects the first conductive film to the second conductive film. The insulation film is removed. A dielectric film and a top electrode are successively formed on the storage node.