SEMICONDUCTOR DEVICE WITH VERTICAL CHANNEL AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device with a vertical channel and a method for manufacturing the same are provided to improve the reliability of the gate insulating layer by suppressing the metal element of the gate electrode from reacting with the gate insulating layer. CONSTITUTION: A semiconductor device with a vertical channel is comprised of a substrate, a plurality of activity pillars, a gate electrode, a word line, and a gate insulating layer. The activity pillars are formed while having the side wall recessed on the top of the substrate. The carbon is contained in the gate electrode which surrounds the recessed side wall of the activity pillar. The word line is the material in which the resistance is lower than the gate electrode and connects the neighboring gate electrodes. The gate insulating layer is formed between the recessed side wall and the gate electrode of activity pillar.