发明名称 MASKED MEMORY CELLS
摘要 PURPOSE: An array of a masked memory cell, a masked read only flash memory cell, and a masked read only memory array and a masked memory cell are provided to decrease the necessary energy consumption and the chip area using a masked storage cell and a transfer path. CONSTITUTION: An array of a masked memory cell is comprised of the first memory cells of the first columns and the second memory cells of the second columns. The first memory cell is accessed to output the first binary values to the first output node and the second binary values to the second output node according to the first binary mask signal. The second memory cell is accessed to output the first binary values to the third output node and the second binary values to the forth output node according to the second binary mask signal. The second output node and the third output node of memory cell(1110) are connected to the same bit line(1100) of the memory array.
申请公布号 KR20090111296(A) 申请公布日期 2009.10.26
申请号 KR20090034800 申请日期 2009.04.21
申请人 发明人
分类号 G11C7/10;G11C7/12;G11C7/22 主分类号 G11C7/10
代理机构 代理人
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