METHOD OF FORMING ZNO TFT OF BOTTOM GATE TYPE

摘要

PURPOSE: A method for forming a bottom gate type zinc oxide thin film transistor is provided to recover an interface defect of a zinc oxide semiconductor layer and a crystal defect of a channel region of the zinc oxide semiconductor layer by moving hydrogen from a gate dielectric film to the zinc oxide semiconductor layer through a heating process. CONSTITUTION: A gate electrode(110) is formed on a substrate(100). A gate dielectric film(120) is formed on the substrate. A zinc oxide semiconductor layer(130) is formed on the gate dielectric film. Hydrogen is supplied from the gate dielectric film to the zinc oxide semiconductor layer by heating a structure in which the gate dielectric film and the zinc oxide semiconductor layer are formed.