| 摘要 |
This invention provides a semiconductor device which can realize improved crystallinity of a capacitor upper electrode constituting a ferroelectric capacitor. The capacitor upper electrode comprises a first layer (57), a second layer (58) provided on the first layer (57), and a third layer (59) provided on the second layer (58). The first layer is formed of a first oxide represented by chemical formula AOx1, wherein x1 represents a composition parameter and A represents a metallic element and having an actual composition represented by chemical formula AOx2, wherein x2 represents a composition parameter and A represents a metallic element. The second oxide is formed of a second oxide represented by chemical formula BOy1, wherein y1 represents a composition parameter and B represents a metallic element, and having an actual composition represented by chemical formula BOy2, wherein y2 represents a composition parameter and B represents a metallic element. The second layer (58) comprises crystals joined to one another in a stone wall form or a columnar form. In the second layer (58), the degree of oxidation is higher than that in the first layer (57). A relationship represented by (y2/y1) > (x2/x1)is established. The third layer (59) is formed of a noble metal film or a noble metal-containing alloy or its oxide.
|
