METHOD OF MANUFACTURING MOS SEMICONDUCTOR MEMORY DEVICE, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE

摘要

PROBLEM TO BE SOLVED: To easily manufacture an MOS semiconductor memory device having an insulation film laminate in which the sizes of band gaps of insulation films adjacent to each other are different from each other. SOLUTION: Plasma CVD is carried out in a pressure condition different from that in forming at least an adjacent insulating film by using a plasma treatment device 100 introducing microwaves into a chamber 1 by a flat antenna 31 having a plurality of holes, and thereby insulation films are sequentially formed by changing the sizes of the band gaps of the insulation films constituting the insulation film laminate and adjacent to one another. COPYRIGHT: (C)2010,JPO&INPIT