发明名称 LEAKAGE CURRENT SUPPRESSING CIRCUIT AND SEMICONDUCTOR CHIP
摘要 A leakage current suppressing circuit includes a bias generating unit and a switch unit. The bias generating unit is adapted to be coupled to a power source and an output terminal, and generates a bias voltage substantially equal to a voltage at the power source when the power source is turned on, and substantially equal to a voltage at the output terminal when the power source is turned off. The switch unit includes a first P-type transistor having a first terminal adapted to be coupled to the power source, a second terminal adapted to be coupled to the output terminal, a gate terminal, and a body terminal coupled to the bias generating unit for receiving the bias voltage therefrom.
申请公布号 US2009261896(A1) 申请公布日期 2009.10.22
申请号 US20090424675 申请日期 2009.04.16
申请人 REALTEK SEMICONDUCTOR CORP. 发明人 TZU-CHIEN TZENG;TAY-HER TSAUR;JIAN LIU
分类号 G05F1/10 主分类号 G05F1/10
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