| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve residue-free etching of a silicon-containing film, in which the treatment time is short and etching of the underlying film is prevented. <P>SOLUTION: A treatment gas which includes a fluorine-based reaction component and H<SB>2</SB>O or a compound which includes an OH group is brought into contact with a material to be treated 90, and a silicon-containing film 93 is etched. The proportion of H<SB>2</SB>O or compound which includes an OH group in the treatment gas is changed as the etching proceeds. Preferably, the proportion is high in a first etching process, in which most of the part of the silicon-containing film which is to be etched is etched, and low in a second etching process, in which the remaining silicon-containing film is etched. <P>COPYRIGHT: (C)2010,JPO&INPIT |
