SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

<P>PROBLEM TO BE SOLVED: To prevent defects from occurring in a semiconductor substrate in a semiconductor device, in a method of manufacturing the same. Ž<P>SOLUTION: A semiconductor device has a silicon substrate 20 in which an active area AR is defined by an element isolating trench 20a and an element isolating insulation film 23 formed in the element isolating trench 20a. The upper face of the element isolating insulation film 23 is lower than that of the silicon substrate 20 in the active area AR. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž