发明名称 |
MULTILEVEL NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTANCE |
摘要 |
A multilevel nonvolatile memory device using a resistance material is provided. The multilevel nonvolatile memory device includes at least one multilevel memory cell and a read circuit. The at least one multilevel memory cell has a level of resistance that varies according to data stored therein. The read circuit first reads first bit data from the multilevel memory cell by providing a first read bias to the multilevel memory cell and secondarily reads second bit data from the multilevel memory cell by providing a second read bias to the multilevel memory cell. The second read bias varies according to a result of the first reading.
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申请公布号 |
US2009262573(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
US20090423881 |
申请日期 |
2009.04.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI BYUNG-GIL;KIM DU-EUNG |
分类号 |
G11C11/00;G11C7/06;G11C11/416 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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