| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a tunnel insulating film formed on a semiconductor substrate, a charge storage insulating film formed on the tunnel insulating film and including at least two separated low oxygen concentration portions and a high oxygen concentration portion positioned between the adjacent low oxygen concentration portions and having a higher oxygen concentration than the low oxygen concentration portions, a charge block insulating film formed on the charge storage insulating film, and control gate electrodes formed on the charge block insulating film and above the low oxygen concentration portions.
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| 申请公布号 |
US2009261400(A1) |
申请公布日期 |
2009.10.22 |
| 申请号 |
US20090425077 |
申请日期 |
2009.04.16 |
| 申请人 |
OZAWA YOSHIO;FUJITSUKA RYOTA |
发明人 |
OZAWA YOSHIO;FUJITSUKA RYOTA |
| 分类号 |
H01L29/788;H01L21/28;H01L21/336 |
主分类号 |
H01L29/788 |
| 代理机构 |
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代理人 |
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| 主权项 |
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