| 摘要 |
To form a LaB6 thin film by magnetron sputtering, a target 11 is applied with DC power and high-frequency component power having a low-frequency component filtered out from a high-frequency power source 193, and a substrate holder 13 is applied with DC power from another DC power source 221 during the application of the high-frequency component power and the DC power. Thus, monocrystallinity in a large-area domain direction of the obtained LaB6 thin film is improved.
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