| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to effectively improve a transistor property by reducing power consumption. CONSTITUTION: A semiconductor device includes a first bonding region, a channel region(110), and a second boding region(112) vertically laminated on a semiconductor substrate(100). The channel region is extended into a gate line direction. The first bonding region having an island shape is formed on the semiconductor substrate. The channel region and the second bonding region are formed on the semiconductor substrate in which the first bonding region is formed.</p> |
