P-TYPE PIEZORESISTIVE RESONANT MICROSENSOR FOR MEASURING MAGNETIC FIELDS

摘要

The invention relates to a p-type piezoresistive resonant microsensor which uses the Lorentz force law for measuring a wide range of magnetic fields (1 -400G) with a high quality factor (Q=842) and magnetic sensitivity (40.3 µV/G) operating at atmospheric pressure. The aim of the invention is to improve existent resonant microsensors by using an optimised 15 µm-thick structural beam-plate configuration made of silicon, with an improved Wheatstone bridge comprising boron-doped (p-type) piezoresistors, and an aluminium loop configuration around the beam-plate structure, enabling improved general operation of the microsensor with a minimum of structural components.