SEMICONDUCTOR RADIATION DETECTOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector which specifies a material which can replace CdTe and has a small environmental load, and uses it.

SOLUTION: There is used the radiation detector comprising a diode configured by utilizing a zinc oxide monocrystal substrate. A Schottky electrode 220 composed of a Pt thin film with a film thickness of 0.1μm is formed on a substrate 210 composed of n-type zinc oxide of a thickness 2 mm. Successively, a Cr thin film 231 with a film thickness of 0.1μm is formed on a lower face of the substrate 210, and further an Au thin film 232 with a film thickness of 0.1μm is formed on a lower face of the Cr thin film 231. The Cr thin film 231 and the Au thin film 232 function as an ohmic electrode 230. Since a current flows in the Schottky diode when a radiation is incident on the substrate 210, it is possible to detect the radiation.

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