| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor manufacturing method for manufacturing a high-performance organic thin-film transistor by a simple process while preventing transmission of oxygen and moisture from the substrate side, and a thin-film transistor manufactured by the same. Ž<P>SOLUTION: Surface mineralization films 7, 8 are formed onto the upper/lower surfaces of a substrate 2. Next, in a first SAM coating step, the surfaces of the surface mineralization films 7, 8 are made rich in hydroxyl group by UV irradiation or the like, and after that, each SAM is coated by a micro contact printing method. Then, a step of immersing the substrate into first catalyst liquid is executed so as to selectively adhere the catalyst to each SAM 10, 11. Subsequently, in a first electroless plating step, a gate electrode 6 is formed on the SAM 10 while a barrier film 14 is collectively formed on the lower surface of the SAM 11. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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