| 发明名称 |
Halbleiterbauelement |
| 摘要 |
The semi conductor device has a pair of connection zones [2,3] with a semiconductor zone [4] with a formed drift zone [5] in between. The drift zone has a compensating structure and has field electrodes [6] in direct contact. The field electrodes are of hydrogen impregnated carbon or polycrystalline silicon. |
| 申请公布号 |
DE102004005775(B4) |
申请公布日期 |
2009.10.22 |
| 申请号 |
DE20041005775 |
申请日期 |
2004.02.05 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SCHULZE, HANS-JOACHIM;FALCK, ELMAR;PFIRSCH, FRANK;SCHMIDT, GERHARD;HIRLER, FRANZ |
| 分类号 |
H01L29/06;H01L29/40;H01L29/417;H01L29/423;H01L29/739;H01L29/78 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
