发明名称 |
Bidirektionales Halbleiterbauelement |
摘要 |
A bidirectional semiconductor device facilitates making a current flow from the first MOSFET to the second MOSFET and vice versa across low on-resistance and exhibits a high breakdown voltage. The bidirectional semiconductor device includes a first n-channel MOSFET including base regions, a second n-channel MOSFET including base regions, and an alternating conductivity type layer formed of drift region and partition regions arranged alternately. Partition regions are isolated from base regions by a high resistivity region and from base regions by a high resistivity region to maintaining a high breakdown voltage between first MOSFET and the second MOSFET. By connecting high resistivity regions and via drift regions to each other, a current is made flow from the first MOSFET to the second MOSFET and vice versa and the on-voltage is reduced. |
申请公布号 |
DE10165050(B4) |
申请公布日期 |
2009.10.22 |
申请号 |
DE2001165050 |
申请日期 |
2001.07.11 |
申请人 |
FUJI ELECTRIC CO. LTD. |
发明人 |
ONISHI, YASUHIKO;FUJIHARA, TATSUHIKO;IWAMOTO, SUSUMU;SATO, TAKAHIRO |
分类号 |
H01L29/78;H01L29/06;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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