| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a crack of a storage node by forming a supporting film more than two layers between storage nodes. CONSTITUTION: A semiconductor device includes a supporting film(112) more than at least two or more layers. The supporting film is formed between a plurality of storage nodes(118), and connects the storage nodes. A sacrificing film(108) and the supporting film are alternately formed on a top part of a semiconductor substrate(100). A plurality of holes is formed by removing the sacrificing film and the supporting film. A storage node is formed on a floor and a sidewall of the hole.
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