| 摘要 |
<P>PROBLEM TO BE SOLVED: To thin a light-shielding layer (i.e., to thin a light-shielding film and a transfer pattern) necessary for generations of DRAM half-pitch (hp) 45 nm and after in a semiconductor design rule, especially for a generation of hp 32-22 nm, as to a photomask blank to be used for manufacturing a photomask for ArF eximer laser exposure. <P>SOLUTION: The photomask includes a light-shielding film 10 formed on a light-permeable substrate and comprising: a light-shielding layer 12 composed of a molybdenum silicide metal in which the content of molybdenum is more than 20 atom % and 40 atom % and less and the thickness of the layer is less than 40 nm; an anti-reflection layer 13 formed in contact with the light-shielding layer 12 and composed of a molybdenum silicide compound containing at least one of oxygen and nitrogen; and a low reflection layer 11 formed under the light-shielding layer 12 in contact with the light-shielding layer 12. <P>COPYRIGHT: (C)2010,JPO&INPIT |
