| 摘要 |
An object is to provide a semiconductor device in which it is possible to determine whether or not a minute delay time given by a delay circuit is within a specified value or not, and a method of testing the semiconductor device. In response to a data strobe signal TDQS for testing, the delay circuits DC0 and DC1 produce delay data strobe signals IDQS0 and IDQS1 delayed by delay times DT0 and DT1. Outputted as a reverse signal from the inverter INV0, is a reverse data strobe signal RIDQS0 in response to the delay data strobe signal IDQS0, and delayed by an allowable delay time IT. Inputted into the NAND gate ND0, are the reverse data strobe signal RIDQS0 and the delay data strobe signal IDQS1. When, in comparison with the phase of the delay data strobe signal IDQS0, the phase of the delay data strobe signal IDQS1 is delayed by the allowable delay time IT or more, a pulse signal PL0 is not outputted from the NAND gate ND0.
|
