MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for suppressing the breakdown voltage degradation of a gate oxide film. SOLUTION: The manufacturing method of the semiconductor device includes: a first process of preparing a semiconductor substrate 10 for which an epitaxial layer 12 is formed on the front surface and a first insulating film 14 is formed on the back surface; a second process of forming an oxide film 16 on the surface on the opposite side of the semiconductor substrate 10 of the epitaxial layer 12; a third process of forming a second insulating film 18 on the surface on the opposite side of the semiconductor substrate 10 of the first insulating film 14; and a fourth process of removing the oxide film 16. COPYRIGHT: (C)2010,JPO&INPIT