发明名称 |
System and Method of Resistance Based Memory Circuit Parameter Adjustment |
摘要 |
Systems and methods of resistance based memory circuit parameter adjustment are disclosed. In a particular embodiment, a method of determining a set of parameters of a resistance based memory circuit includes selecting a first parameter based on a first predetermined design constraint of the resistance based memory circuit and selecting a second parameter based on a second predetermined design constraint of the resistance based memory circuit. The method further includes performing an iterative methodology to adjust at least one circuit parameter of a sense amplifier portion of the resistance based memory circuit by selectively assigning and adjusting a physical property of the at least one circuit parameter to achieve a desired sense amplifier margin value without changing the first parameter or the second parameter.
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申请公布号 |
US2009265678(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
US20080107252 |
申请日期 |
2008.04.22 |
申请人 |
QUALCOMM INCORPORATED;YONSEI UNIVERSITY |
发明人 |
JUNG SEONG-OOK;KIM JISU;SONG JEE-HWAN;KANG SEUNG H.;YOON SEI SEUNG |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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