HETERO-JUNCTION SILICON SOLAR CELL AND FABRICATION METHOD THEREOF
摘要
Disclosed are a hetero-junction silicon solar cell and a fabrication method thereof. The hetero-junction silicon solar cell according to the present invention forms a pn junction of a crystalline silicon substrate and a passivation layer doped with impurities so as to minimize a recombination of electrons and holes, making it possible to maximize efficiency of the hetero-junction silicon solar cell. The present invention provides a hetero-junction silicon solar cell comprising a crystalline silicon substrate and a passivation layer that is formed on the crystalline silicon substrate and is doped with impurities.
申请公布号
WO2009078672(A3)
申请公布日期
2009.10.22
申请号
WO2008KR07495
申请日期
2008.12.17
申请人
LG ELECTRONICS INC.;KO, JI-HOON;EO, YOUNG-JOO;KIM, JIN-AH;YUN, JU-HWAN;JUNG, IL-HYOUNG;KIM, JONG-HWAN