ANTIFERROELECTRIC GATE TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND NON-VOLATILE MEMORY ELEMENT

摘要

An antiferroelectric gate transistor is used instead of a ferroelectric gate transistor. The antiferroelectric gate transistor comprises a silicon substrate, an antiferroelectric film of a perovskite structure with residual polarization formed over the silicon substrate via a gate insulating film, a gate electrode formed over the antiferroelectric film with the residual polarization and diffusion regions formed within the silicon substrate on a first side of the gate electrode and on a second side opposite to the first side.