| 摘要 |
PURPOSE: A discharge circuit of semiconductor memory apparatus is provided to reduce the change of the core voltage level. CONSTITUTION: The discharge circuit of the semiconductor memory device includes the signal combination part, the voltage divider, and the comparator and the multi discharge unit. The signal combination part(100) assembles the signal by receiving data input/output mode signal and refresh operation signal. The voltage divider(400) outputs the distribution voltage to distribute the core voltage. The comparator part(200) outputs a detected signal by comparing the level of the distribution voltage and reference voltage. The multi discharge unit(300) includes the discharge drivers. The multi discharge unit discharges the core voltage in response to the output of the sensing signal and signal combination part.
|
