HIGH WITHSTAND VOLTAGE TRENCHED MOS TRANSISTOR AND MANUFACTURING METHOD THEREOF,申请号KR20070096440-传众专利搜索

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发明名称	HIGH WITHSTAND VOLTAGE TRENCHED MOS TRANSISTOR AND MANUFACTURING METHOD THEREOF
摘要
申请公布号	KR100923033(B1)	申请公布日期	2009.10.22
申请号	KR20070096440	申请日期	2007.09.21
申请人		发明人
分类号	H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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