发明名称 |
RECESS GATE TRANSISTOR |
摘要 |
A method of forming a semiconductor device is provided, comprising forming a plurality of hard masks on a substrate by patterning an insulating layer; forming a plurality of trenches in the substrate, each trench having trench walls disposed between two adjacent masks and extending vertically from a bottom portion to an upper portion; forming an insulating layer on the hard masks and the trench walls; forming a conductive layer on the insulating layer; etching the conductive layer to form conductive layer patterns to fill the bottom portions of the trenches; depositing a buffer layer on the conductive layer patterns and the trench walls; and filling the upper portions of the trenches with a capping layer. |
申请公布号 |
US2009261420(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
US20080332877 |
申请日期 |
2008.12.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RYU HO-IN;KIM BONG-SU;KIM DAE-IK;LEE HO-JUN;JANG DAE-YOUNG;LEE SI-HYUNG |
分类号 |
H01L25/00;H01L21/4763;H01L29/78 |
主分类号 |
H01L25/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|